Renesas develops 40-nm embedded automotive flash memory
Renesas Electronics, a premier supplier of advanced semiconductor solutions, says it has developed the industry’s first 40-nanometer (nm) memory intellectual property (IP) for automotive real-time applications. The company’s latest developement will aslo be the first to launch 40nm embedded flash microcontrollers (MCUs) for automotive applications using its new 40nm flash technology with samples available by the beginning of autumn 2012.
“Renesas flash MONOS technology is scalable while providing both high reliability and high performance at the same time. Evaluation results available from 40nm flash test devices prove that excellent characteristics for three critical parameters (data retention, program/erase cycle endurance and programming time) have been achieved successfully. The 40nm process node enables integration of several functional safety-related and communication interface.” Renesas said on its website.
The technology offers 20 years of data retention and progam-erase endurance of 125,000 cycles, Renesas said. Based on MONOS (metal oxided nitride oxide silicon), the memory can be read at up to 170 degrees C junction temperature and the code flash supports read speed of 120 megahertz (MHz). The data flash achieves industry-leading long data-retention period of 20 years even after 125,000 of program/erase cycles.