Globalfoundries announces 20nm process node can stack silicon
Globalfoundries has been tooling up its new Fab 8 facility in the US and announced it will be able to use Through-Silicon Vias (TSV) in wafers fabbed with its 20nm process node. According to Globalfoundries, TSV will allow chip designers to stack chips for improved performance.
As Globalfoundries tools up for its 20nm process node the firm says TSVs, vertical holes etched in silicon and filled with copper, could allow chip designers to stack memory chips above processors. If Globalfoundries can make this cost effective, then it could bring significant power reductions by reducing the need for off-package chips.
Gregg Bartlett, CTO of Globalfoundries said, “Our approach is broad and collaborative, giving customers maximum choice and flexibility, while delivering cost savings, faster time-to-volume, and a reduction in the technical risk associated with developing new technologies. With the installation of TSV capabilities for 20nm technology in Fab 8, we are adding an important capability that will be supplemented by our joint development and manufacturing partnerships with companies across the semiconductor ecosystem, from design to assembly and test.”
Globalfoundries said first full-flow silicon incorporating TSVs will be rolling off its Fab 8 production line in the third quarter.